10:00 〜 10:15
[D-7-04] A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Devices
○A. Zhang1, Q. Zhou1, C. Yang1, Y. Shi1, W. Chen1, Z. Li1, B. Zhang1
(1.Univ. of Electronic Sci. and Tech. of China (China))
https://doi.org/10.7567/SSDM.2018.D-7-04