10:15 〜 10:30

[D-7-05] 100V to 1800V High Performance p-GaN HEMT Epitaxial Layers and E-mode Power Devices on 8-inch Commercial QST^® Substrates

^○C. Basceri¹, V. Odnoblyudov¹, O. Aktas¹, S. Farrens¹ (1.Qromis, Inc. (USA))

https://doi.org/10.7567/SSDM.2018.D-7-05