The Japan Society of Applied Physics

10:30 〜 10:45

[D-7-06] Investigation of the Si3N4/(Al)GaN interface properties in LPCVD Si3N4/AlGaN/GaN MIS-HEMT with Post Deposition Annealing

H. Sun1, M. Wang1, J. Chen2, D. Chen1 (1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China))

https://doi.org/10.7567/SSDM.2018.D-7-06