Investigation of the Si3N4/(Al)GaN interface properties in LPCVD Si3N4/AlGaN/GaN MIS-HEMT with Post Deposition Annealing

10:30 AM - 10:45 AM

[D-7-06] Investigation of the Si₃N₄/(Al)GaN interface properties in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMT with Post Deposition Annealing

^○H. Sun¹, M. Wang¹, J. Chen², D. Chen¹ (1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China))