10:30 〜 10:45

[D-7-06] Investigation of the Si₃N₄/(Al)GaN interface properties in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMT with Post Deposition Annealing

^○H. Sun¹, M. Wang¹, J. Chen², D. Chen¹ (1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China))

https://doi.org/10.7567/SSDM.2018.D-7-06