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[D-8-01] A Superior 15-kV SiC MOSFET with Current Spreading Layer for High-Frequency Applications

^○H. Kitai¹, T. Yamaguchi¹, Y. Hozumi¹, H. Shiomi¹, K. Fukuda¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-01