14:00 〜 14:15

[D-8-01] A Superior 15-kV SiC MOSFET with Current Spreading Layer for High-Frequency Applications

^○H. Kitai¹, T. Yamaguchi¹, Y. Hozumi¹, H. Shiomi¹, K. Fukuda¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.D-8-01