10:15 〜 10:30

[E-3-05 (Late News)] Achieving extremely high levels of electrically active doping in silicon carbide epitaxy

G. Colston¹,^○M. Myronov² (1.Advanced Epi Materials and Devices Ltd (UK), 2.The University of Warwick (UK))

https://doi.org/10.7567/SSDM.2018.E-3-05