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[E-6-01] Atomically flat interface formation on Ge(111) in oxidation process

^○T. Nishimura¹, S. Takemura¹, X. Wang¹, S. Shibayama¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.E-6-01