15:30 〜 15:45

[E-6-02] Low-Temperature Formation of n-Type Ge on Insulator by Thickness-Modulated Sb-Induced Layer Exchange Crystallization Combined with Thin Ge Under-Layer Insertion

^○H. Gao¹, M. Miyao¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.E-6-02