14:00 〜 14:30

[G-1-01 (Invited)] Fully Aligned Via Integration for beyond 7 nm

^○D. Sil¹, B.D. Briggs¹, C.B. Peethala¹, D.L. Rath¹, J. Lee¹, S. Nguyen¹, N.V. LiCausi³, H. You³, N.A. Lanzillo¹, H. Huang¹, R. Patlolla¹, T. Haigh Jr¹, Y. Xu¹, C. Park³, H.K. Shobha¹, Y. Kim⁴, J. Lee⁴, J. Demarest¹, J. Li¹, G. Lian², M. Ali², C.T. Le², E.T. Ryan³, P. Mennell³, L.A. Clevenger¹, D.F. Canaperi¹, T.E. Standaert¹, G. Bonilla¹, E. Huang¹, K. Choi¹, B.S. Haran¹ (1.IBM Res. (USA), 2.IBM Systems (USA), 3.GLOBALFOUNDRIES Inc. (USA), 4.Samsung Electronics (Korea))

https://doi.org/10.7567/SSDM.2018.G-1-01