Growth of Multi-Layer Graphene (MLG) Inside Si Deep Trench for 3D-LSI Application

M. Mariappan

doi:https://doi.org/10.7567/SSDM.2018.G-3-04

10:00 〜 10:15

[G-3-04] Growth of Multi-Layer Graphene (MLG) Inside Si Deep Trench for 3D-LSI Application

^○M. Mariappan¹, T. Akimoto², H. Kawakami², K. Ueno², T. Fukushima¹, M. Koyanagi¹ (1.Tohoku University (Japan), 2.Shibaura Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2018.G-3-04

2018 International Conference on Solid State Devices and Materials

[G-3-04] Growth of Multi-Layer Graphene (MLG) Inside Si Deep Trench for 3D-LSI Application