On-Chip Integration of RF Termination Resistor and Backside Via Hole in InP-Based Mach-Zehnder Modulator for Compact Coherent Transceiver

T. Kitamura

doi:https://doi.org/10.7567/SSDM.2018.H-4-05

11:45 〜 12:00

[H-4-05] On-Chip Integration of RF Termination Resistor and Backside Via Hole in InP-Based Mach-Zehnder Modulator for Compact Coherent Transceiver

^○T. Kitamura¹, M. Watanabe¹, N. Kono¹, T. Kikuchi¹, R. Yamabi¹, H. Tanaka¹, M. Seki¹, T. Katsuyama¹, M. Ekawa¹, H. Shoji¹ (1.Sumitomo Electric Industries, LTD. (Japan))

https://doi.org/10.7567/SSDM.2018.H-4-05

2018 International Conference on Solid State Devices and Materials

[H-4-05] On-Chip Integration of RF Termination Resistor and Backside Via Hole in InP-Based Mach-Zehnder Modulator for Compact Coherent Transceiver