Extremely Low Power LSI Using Crystalline Oxide Semiconductor Transistor

T. Onuki

doi:https://doi.org/10.7567/SSDM.2018.J-4-01

10:45 〜 11:15

[J-4-01 (Invited)] Extremely Low Power LSI Using Crystalline Oxide Semiconductor Transistor

^○T. Onuki¹, T. Atsumi¹, R. Tokumaru¹, T. Murakawa¹, K. Kato¹, C.M. Lai², D. Chen², S. Yamazaki¹ (1.Semiconductor Energy Lab. Co., Ltd. (Japan), 2.United Microelectronics Corp. (UMC) (Taiwan))

https://doi.org/10.7567/SSDM.2018.J-4-01

2018 International Conference on Solid State Devices and Materials

[J-4-01 (Invited)] Extremely Low Power LSI Using Crystalline Oxide Semiconductor Transistor