The Japan Society of Applied Physics

10:45 〜 11:15

[J-4-01 (Invited)] Extremely Low Power LSI Using Crystalline Oxide Semiconductor Transistor

T. Onuki1, T. Atsumi1, R. Tokumaru1, T. Murakawa1, K. Kato1, C.M. Lai2, D. Chen2, S. Yamazaki1 (1.Semiconductor Energy Lab. Co., Ltd. (Japan), 2.United Microelectronics Corp. (UMC) (Taiwan))

https://doi.org/10.7567/SSDM.2018.J-4-01