The Japan Society of Applied Physics

11:30 〜 11:45

[J-4-03] High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/um) Off Leakage Current

N. Saito1, T. Sawabe1, J. Kataoka1, T. Ueda1, T. Tezuka1, K. Ikeda1 (1.Toshiba Memory Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.J-4-03