High mobility (&gt;30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (&lt;10-20 A/um) Off Leakage Current

11:30 〜 11:45

[J-4-03] High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/um) Off Leakage Current

^○N. Saito¹, T. Sawabe¹, J. Kataoka¹, T. Ueda¹, T. Tezuka¹, K. Ikeda¹ (1.Toshiba Memory Corp. (Japan))