9:15 AM - 9:30 AM [M-7-02] Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET ○S. Toyoda1, T. Taniguchi2, K. Watanabe2, K. Nagashio1 (1.Univ. of Tokyo (Japan), 2.NIMS (Japan)) https://doi.org/10.7567/SSDM.2018.M-7-03