The Japan Society of Applied Physics

09:30 〜 09:45

[M-7-03] p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric

W. Zhang1, S. Netsu1, T. Kanazawa1, T. Amemiya2, Y. Miyamoto1 (1.Dept. Electrical and Electronic Engineering, Tokyo Tech (Japan), 2.IIR, Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2018.M-7-04