10:15 〜 10:30

[M-7-06] High-k Er₂O₃ top gate deposition on 2D channel at room temperature by P_O2 controlled thermal evaporation

^○K. Maruyama¹, K. Nagashio¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.M-7-07