16:15 〜 16:30

[N-2-04] Improving hole mobility of solid-phase crystallized Ge on glass by reduction of carrier scattering factors

^○T. Imajo¹, R. Yoshimine¹, K. Moto¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2018.N-2-04