The Japan Society of Applied Physics

10:00 〜 10:15

[N-3-04] High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET

H. Kunitake1, S. Ohshita1, S. Saga1, Y. Narusawa1, N. Ishihara1, R. Honda1, M. Kurata1, T. Atsumi1, K. Kato1, C.M. Lai2, D. Chen2, S. Yamazaki1 (1.Semiconductor Energy Laboratory Co., Ltd. (Japan), 2.United Microelectronics Corporation (UMC) (Taiwan))

https://doi.org/10.7567/SSDM.2018.N-3-04