10:00 〜 10:15

[N-3-04] High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET

^○H. Kunitake¹, S. Ohshita¹, S. Saga¹, Y. Narusawa¹, N. Ishihara¹, R. Honda¹, M. Kurata¹, T. Atsumi¹, K. Kato¹, C.M. Lai², D. Chen², S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan), 2.United Microelectronics Corporation (UMC) (Taiwan))

https://doi.org/10.7567/SSDM.2018.N-3-04