The Japan Society of Applied Physics

16:15 〜 16:30

[N-6-04 (Late News)] Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias

D. Zhao1, N. Saito1, T. Ueda1, T. Tezuka1, K. Ikeda1 (1.Toshiba Memory Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.N-6-04