16:15 〜 16:30

[N-6-04 (Late News)] Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias

^○D. Zhao¹, N. Saito¹, T. Ueda¹, T. Tezuka¹, K. Ikeda¹ (1.Toshiba Memory Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.N-6-04