Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

11:00 AM - 1:30 PM

[PS-10-17 (Late News)] Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

^○J. Kataoka¹, N. Saito¹, T. Ueda¹, T. Tezuka¹, T. Sawabe¹, K. Ikeda¹ (1.Toshiba Memory Corp. (Japan))