Analysis of Deep Traps at Al<sub>2</sub>O<sub>3</sub>/n-GaN Interface using Photo-assisted C-V Measurement

K. Yuge

doi:https://doi.org/10.7567/SSDM.2018.PS-4-03

11:00 〜 13:30

[PS-4-03] Analysis of Deep Traps at Al₂O₃/n-GaN Interface using Photo-assisted C-V Measurement

^○K. Yuge^1,2, T. Nabatame², Y. Irokawa², A. Ohi², N. Ikeda², A. Uedono³, L. Sang², Y. Koide², T. Ohishi¹ (1.Shibaura Inst. of Tech. (Japan), 2.NIMS (Japan), 3.Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-03

2018 International Conference on Solid State Devices and Materials

[PS-4-03] Analysis of Deep Traps at Al2O3/n-GaN Interface using Photo-assisted C-V Measurement

[PS-4-03] Analysis of Deep Traps at Al₂O₃/n-GaN Interface using Photo-assisted C-V Measurement