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[PS-4-04] Origin of Border Traps in Normally-off Al₂O₃/GaN MOSFET with Different Gate Recess Techniques

^○R. Yin¹, Y. Li¹, Y. Sun¹, C.P. Wen¹, Y.L. Hao¹, M.J. Wang¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2018.PS-4-04