The Japan Society of Applied Physics

11:00 〜 13:30

[PS-4-12 (Late News)] Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique

Y.D. Jin1, H.Q. Luc1, W.J. Lin1, S.K. Yang1, Y.K. Zhang1, B.H. Do1, H.S. Huynh1, H.M.T. Ha1, P. Huang1, W.C. Hsu1, C.Y. Lin1, E.Y. Chang1 (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-4-12