Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique

Y.D. Jin

doi:https://doi.org/10.7567/SSDM.2018.PS-4-12

11:00 AM - 1:30 PM

[PS-4-12 (Late News)] Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique

^○Y.D. Jin¹, H.Q. Luc¹, W.J. Lin¹, S.K. Yang¹, Y.K. Zhang¹, B.H. Do¹, H.S. Huynh¹, H.M.T. Ha¹, P. Huang¹, W.C. Hsu¹, C.Y. Lin¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-4-12

2018 International Conference on Solid State Devices and Materials

[PS-4-12 (Late News)] Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique