Evaluations of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Processes

H. Kobayashi

doi:https://doi.org/10.7567/SSDM.2018.PS-4-14

11:00 〜 13:30

[PS-4-14] Evaluations of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Processes

^○H. Kobayashi¹, R. Yokogawa^1,2, K. Kinoshita¹, Y. Numazawa¹, A. Ogura¹, S. Nishizawa³, T. Saraya⁴, K. Ito⁴, T. Takakura⁴, S. Suzuki⁴, M. Fukui⁴, K. Takeuchi⁴, T. Hiramoto⁴ (1.Meiji Univ. (Japan), 2.JSPS Research Fellow DC (Japan), 3.Kyushu Univ. (Japan), 4.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.PS-4-14

2018 International Conference on Solid State Devices and Materials

[PS-4-14] Evaluations of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Processes