InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics

H.Q. Luc

doi:https://doi.org/10.7567/SSDM.2018.PS-4-21

11:00 〜 13:30

[PS-4-21 (Late News)] InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics

^○H.Q. Luc¹, Y.K. Zhang¹, D.Y. Jin¹, H.S. Huynh¹, H.M.T. Ha¹, B.H. Do¹, P. Huang¹, W.C. Hsu¹, C.Y. Lin¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-4-21

2018 International Conference on Solid State Devices and Materials

[PS-4-21 (Late News)] InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics