11:00 AM - 1:30 PM

[PS-9-20] Device Characteristics of Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping

^○C.L. Lin¹, J.D. Lee¹, Y.J. Lee², Y.J. Lu¹, W.K. Yeh^3,2, T.K. Kang¹, P.C. Juan⁴, Y.Z. Zhu¹, T.Y. Lin¹ (1.Feng Chia University (Taiwan), 2.National Nano Device Laboratories (Taiwan), 3.National University of Kaohsiung (Taiwan), 4.Mingchi University of Technology (Taiwan))

https://doi.org/10.7567/SSDM.2018.PS-9-20