Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~

16:30 〜 16:31

[PS-1-01] Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~

^○M. Hogyoku¹, T. Izumida¹, H. Tanimoto¹, N. Aoki¹, S. Onoue¹ (1.Toshiba Memory Corp. (Japan))