16:41 〜 16:42

[PS-1-12] Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

^○K. Yamamoto¹, K. Nakae¹, D. Wang¹, H. Nakashima¹, Z. Xue², M. Zhang², Z. Di² (1.Kyushu Univ. (Japan), 2.Chinese Academy of Sci. (China))