16:43 〜 16:44

[PS-1-14] Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al₂O₃/ZrO₂ for gate insulator

^○R. Aonuma¹, N. Kise¹, Y. Miyamoto¹ (1.Tokyo Tech (Japan))