Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:44 〜 16:45

^○S.H. Hsu¹, K.S. Chang-Liao¹, Y.L. Li¹, C.H. Huang¹, D.B. Ruan¹, S.F. Tsai¹, M.Y. Chen¹ (1.National Tsing Hua University (Taiwan))