Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

4:44 PM - 4:45 PM

^○S.H. Hsu¹, K.S. Chang-Liao¹, Y.L. Li¹, C.H. Huang¹, D.B. Ruan¹, S.F. Tsai¹, M.Y. Chen¹ (1.National Tsing Hua University (Taiwan))