4:46 PM - 4:47 PM

[PS-1-17] Steep Switching Less Than 15 mV/decade in Silicon-on-Insulator Tunnel FETs by Trimmed-Gate Structure

^○H. Asai¹, T. Mori¹, T. Matsukawa¹, J. Hattori¹, K. Endo¹, K. Fukuda¹ (1.AIST (Japan))