A Study of Interfacial Layer Quality and Thermal Stability of HfO<sub>2</sub>/SiGe Gate Stack by Using NH<sub>3</sub> Plasma Treatment

4:54 PM - 4:55 PM

[PS-1-25] A Study of Interfacial Layer Quality and Thermal Stability of HfO₂/SiGe Gate Stack by Using NH₃ Plasma Treatment

^○C.Y. Yu¹, W.L. Lee¹, M.L. Tasi¹, J.L. Zhang¹, G.L. Luo², C.H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))