Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile

16:58 〜 16:59

[PS-1-29 (Late News)] Improvement of I_ON and S.S. values of p-GaAs_0.51Sb_0.49/In_0.53Ga_0.47As hetero-junction vertical TFETs by using abrupt source impurity profile

^○T. Gotow¹, M. Mitsuhara², T. Hoshi², H. Sugiyama², M. Takenaka¹, S. Takagi¹ (1.The University of Tokyo (Japan), 2.NTT Device Tech. Lab. (Japan))