The Japan Society of Applied Physics

4:33 PM - 4:34 PM

[PS-10-04] Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Z.K. Zhuang1, S.J. Wang1, S.Y. Wang1, H.Y. Chen1,C.K. Liao1, S.T. Hsiao1, B.C. You1, R.M. Ko1 (1.Univ. of Cheng Kung (Taiwan))