16:33 〜 16:34
[PS-10-04] Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric
Z.K. Zhuang1, S.J. Wang1, S.Y. Wang1, H.Y. Chen1,○C.K. Liao1, S.T. Hsiao1, B.C. You1, R.M. Ko1
(1.Univ. of Cheng Kung (Taiwan))