Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

W.T. Sun

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:37 〜 16:38

[PS-2-08] Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

^○W.T. Sun¹, J.T. Lin¹, H.H. Lin¹, Y.J. Chen¹, A. Kranti² (1.National Sun Yat-sen University (Taiwan), 2.Indian Institute of Technology Indore (India))

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