Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

W.T. Sun

2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

4:37 PM - 4:38 PM

[PS-2-08] Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

^○W.T. Sun¹, J.T. Lin¹, H.H. Lin¹, Y.J. Chen¹, A. Kranti² (1.National Sun Yat-sen University (Taiwan), 2.Indian Institute of Technology Indore (India))

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