High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure

Y.C. Liang

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜 2018年9月13日
University of Tokyo

16:56 〜 16:57

[PS-3-08] High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure

^○Y.C. Liang^1,2, K. Ren¹, S.J. Chua¹, Z. Wang¹, X. Gong¹ (1.National University of Singapore (Singapore), 2.National University of Singapore, Suzhou Research Institute (China))

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