16:36 〜 16:37 [PS-4-07 (Late News)] Investigation on Parasitic Loss at the AlN/Si Interface for GaN-HEMTs Application ○Y.H. Chen1, T.T. Luong1, V. Nagarajan1, T.H. Chiang1, E.Y. Chang1 (1.National Chiao Tung University (Taiwan))