High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

K. Horikawa

16:44 〜 16:45

[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

^○K. Horikawa¹, A. Hiraiwa^2,3,4, S. Okubo¹, T. Kageura¹, H. Kawarada^1,2,3 (1.Waseda Univ. (Japan), 2.RONL, Waseda Univ. (Japan), 3.KMRIMST, Waseda Univ. (Japan), 4.IMaSS, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials

[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition