The Japan Society of Applied Physics

4:51 PM - 4:52 PM

[PS-4-22] Characteristic Analysis of Normally-off Al2O3/H-diamond MOSFET with 40-μm Gate Length

J. Zhang1, W. Chen1, Z. Ren1, J. Zhang1, Y. Hao1 (1.Xidian Univ. (China))