16:56 〜 16:57

[PS-8-27 (Late News)] Novel InAs/GaSb Heterostructure Nanowire Based Tunnel Field Effect Transistor

^○R.K. Kakkerla¹, S.K. Singh¹, H.B. Joseph³, A. Gupta², D. Anandan¹, V. Nagarajan¹, H.W. Yu¹, E.Y. Chang¹ (1.National Chiao Tung University (Taiwan), 2.Indian Institute of Technology Delhi (India), 3.SRM University (India))